dnls160v low v ce(sat) npn surface mount transistor features ? epitaxial planar die construction ? complementary pnp type available (dpls160v) ? surface mount package suited for automated assembly ? ultra-small surface mount package ? lead free/rohs compliant (note 1) ? "green device" (note 2) ? qualified to aec-q 101 standards for high reliability m echanical data ? case: sot-563 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020d ? terminals: finish ? matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 ? marking information: see page 4 ? ordering information: see page 4 ? weight: 0.003 grams (approximate) ds31248 rev. 3 - 2 1 of 4 www.diodes.com dnls160v ? diodes incorporated new product sot-563 123 654 1, 2, 5, 6 3 4 maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit collector-base voltage v cbo 80 v collector-emitter voltage v ceo 60 v emitter-base voltage v ebo 5 v collector current - continuous i c 1 a peak pulse collector current i cm 2 a base current (dc) i b 300 ma thermal characteristics characteristic symbol value unit power dissipation (note 3) @ t a = 25 c p d 300 mw thermal resistance, junction to ambient (note 3) @ t a = 25 c r ja 417 c/w operating and storage temperature range t j , t stg -55 to +150 c notes: 1. no purposefully added lead. 2. diode?s inc.?s ?green? policy can be found on our website at http:// www.di odes.com/products/lead_f ree/index.php. 3. device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0.062 inch; pad layout as s hown on page 4 or in diodes inc. suggested pad layout document ap02001, which can be found on our website at http:// www.di odes.com/datas heets/ap02001.pdf.
electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 4) collector-base breakdown voltage v (br)cbo 80 ? ? v i c = 100 a, i e = 0 collector-emitter breakdown voltage v (br)ceo 60 ? ? v i c = 10ma, i b = 0 emitter-base breakdown voltage v (br)ebo 5 ? ? v i e = 100 a, i c = 0 collector cutoff current ds31248 rev. 3 - 2 2 of 4 www.diodes.com dnls160v ? diodes incorporated new product i cbo ? ? 100 50 na a v cb = 60v, i e = 0 v cb = 60v, i e = 0, t a = 150c collector cutoff current i ces ? ? 100 na v ce = 60v, v be = 0 emitter cutoff current i ebo ? ? 100 na v eb = 5v, i c = 0 on characteristics (note 4) dc current gain h fe 250 200 100 320 280 165 ? ? ? v v ce = 5v, i c = 1ma v ce = 5v, i c = 500ma v ce = 5v, i c = 1a collector-emitter saturation voltage v ce(sat) ? ? ? 80 80 140 110 140 250 mv i c = 100ma, i b = 1ma i c = 500ma, i b = 50ma i c = 1a, i b = 100ma collector-emitter saturation resistance r ce(sat) ? 140 250 m ? i c = 1a, i b = 100ma base-emitter saturation voltage v be(sat) ? 0.91 1.1 v i c = 1a, i b = 50ma base-emitter turn on voltage v be(on) ? 0.81 0.9 v v ce = 5v, i c = 1a small signal characteristics output capacitance c obo ? 7 10 pf v cb = 10v, f = 1.0mhz current gain-bandwidth product f t 150 270 ? mhz v ce = 10v, i c = 50ma, f = 100mhz switching characteristics turn-on time t on ? 90 ? ns delay time ? 17 ? ns t d rise time ? 73 ? ns t r turn-off time ? 300 ? ns t off storage time ? 220 ? ns t s ? 80 ? ns v cc = 10v i c = 0.5a, i b1 = i b2 = 25ma fall time t f notes: 4. measured under puls ed conditions. pulse width = 300 s. duty cycle 2%. 0 50 100 25 50 75 100 125 150 p , p o we r dissi p a t i o n (mw) d t , ambient temperature (c) fig. 1 maximum power dissipation vs. ambient temperature a 150 200 250 300 0 fig. 2 typical collector current vs. collector-emitter voltage
fig. 3 typical dc current gain vs. collector current fig. 4 typical collector-emitter saturation voltage vs. collector current new product fig. 5 typical base-emitter turn-on voltage vs. collector current 0.001 0.01 0.1 1 10 fig. 6 typical base-emitter saturation voltage vs. collector current fig. 7 typical capacitance characteristics 0 20 40 60 80 100 120 fig. 8 typical gain-bandwidth product vs. collector current v =10v f = 100mhz ce ds31248 rev. 3 - 2 3 of 4 www.diodes.com dnls160v ? diodes incorporated
ds31248 rev. 3 - 2 4 of 4 www.diodes.com dnls160v ? diodes incorporated ordering information (note 5) device packaging shipping DNLS160V-7 sot-563 3000/tape & reel notes: 5. for packaging details, go to our website at http://www.di odes.com/datas heets/ap02007.pdf. marking information new product nk1 = product type marking code ym = date code marking y = year ex: v = 2008 m = month ex: 9 = september nk1 ym date code key year 2008 2009 2010 2011 2012 2013 2014 2015 code v w x y z a b c month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d package outline dimensions suggested pad layout (in mm) important notice diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to any product herein. diodes incorporat ed does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the ri ghts of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes inco rporated and all the companies whose products are represented on our website, harmless against all damages. life support diodes incorporated products are not authoriz ed for use as critical components in life support devices or systems without the e xpressed written approval of the president of diodes incorporated. a m l b c h k g d sot-563 dim min max typ a 0.15 0.30 0.20 b 1.10 1.25 1.20 c 1.55 1.70 1.60 d - - 0.50 g 0.90 1.10 1.00 h 1.50 1.70 1.60 k 0.55 0.60 0.60 l 0.10 0.30 0.20 m 0.10 0.18 0.11 all dimensions in mm 0.375 2.2 0.5 1.7 0.5 0.5 1.2
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